DMP56D0UFB document number: ds36175 rev. 2 - 2 1 of 5 www.diodes.com june 2013 ? diodes incorporated DMP56D0UFB p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) i d t a = +25c -50v 6 ? @ v gs = -4 v -200ma 8 ? @ v gs = -2.5v -160ma description this new generation mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions ? battery operated systems and solid-state relays features and benefits ? low on-resistance ? esd protected gate ? low input/output leakage ? fast switching speed ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: x1-dfn1006-3 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.001 grams (approximate) ordering information (note 4) part number case packaging DMP56D0UFB -7 x1-dfn1006-3 3000/tape & reel DMP56D0UFB -7b x1-dfn1006-3 10000/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html marking information x-dfn1006-3 equivalent circuit top view internal schematic bottom view d s g source gate protection diode gate drai n body diode d3 = product type marking code DMP56D0UFB -7 DMP56D0UFB -7b top view bar denotes gate and source side top view dot denotes drain side esd protected d3 d3 ? green e4
DMP56D0UFB document number: ds36175 rev. 2 - 2 2 of 5 www.diodes.com june 2013 ? diodes incorporated DMP56D0UFB maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -50 v gate-source voltage v gss 8 v drain current (note 5) steady t a = +25c i d -200 ma pulsed drain current (note 6) i dm -700 ma thermal characteristics characteristic symbol value units total power dissipation (note 5) p d 425 mw thermal resistance, junction to ambient @t a = +25c (note 5) r ja 275 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -50 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ? ? -10 a v ds = -50v, v gs = 0v gate-source leakage i gss ? ? 1 a v gs = 8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.5 ? -1.2 v v ds = v gs , i d = -250a static drain-source on-resistance r ds (on) ?? 4.6 6 6 8 ? v gs = -4.0v, i d = -100ma v gs = -2.5v, i d = -80ma forward transfer admittance |y fs | 100 ? ? ms v ds = -5v, i d = -100ma diode forward voltage (note 7) v sd ? ? -1.2 v v gs = 0v, i s = -100ma dynamic characteristics (note 8) input capacitance c iss ? 50.54 ? pf v ds = -25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 3.49 ? pf reverse transfer capacitance c rss ? 2.42 ? pf gate resistance r g ? 201 ? ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge v gs = 4.5v q g ? 0.58 ? nc v gs = -4v, v ds = -25v, i d = -100ma gate-source charge q g s ? 0.09 ? nc gate-drain charge q g d ? 0.14 ? nc turn-on delay time t d ( on ) ? 4.46 ? ns v dd = -30v, i d = -0.27a, v gen = -4v , r gen = 6 ? turn-on rise time t r ? 6.63 ? ns turn-off delay time t d ( off ) ? 21.9 ? ns turn-off fall time t f ? 15.0 ? ns notes: 5. device mounted on fr-4 pcb. t 5 sec. 6. pulse width 10s, duty cycle 1%. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
DMP56D0UFB document number: ds36175 rev. 2 - 2 3 of 5 www.diodes.com june 2013 ? diodes incorporated DMP56D0UFB 0.0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 3.5 44.5 5 -v , drain-source voltage (v) figure 1 typical output characteristics ds -i , d r ain c u r r en t (a) d v = 1.5v gs v = 1.2v gs v = 1.8v gs v = 2.5v gs v = 4.0v gs v = 4.5v gs v = 8.0v gs 0 0.1 0.2 0.3 0.4 -v , gate-source voltage (v) figure 2 typical transfer characteristics gs -i , d r ai n c u r r e n t (a) d v = -5v ds t = 85c a t = 150c a t = 25c a t = 125c a t = -55c a 2 3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5 0.6 -i , drain-source current (a) figure 3 typical on-resistnace vs. drain current and gate voltage d r , drain-s o urce o n-resistance ( ) ds(on) ? v = -2.5v gs v = -4.5v gs v = -4.0v gs v = -8.0v gs 0 1 2 3 4 5 6 7 8 9 0 0.1 0.2 0.3 0.4 0.5 0.6 -i , drain current (a) figure 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? 10 t = 150c a v = -4v gs t = 125c a t = 85c a t = 25c a t = -55c a 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) figure 5 on-resistance variation with temperature j r , d r ain-s o u r c e o n- r esis t an c e (normalized) ds(on) v = -4v i = -100ma gs d v = -2.5v i = -100ma gs d 10 -50-25 0255075100125150 t , junction temperature (c) figure 6 on-resistance variation with temperature j r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? 9 8 7 3 2 1 0 6 5 4 v = -4v, i = -100ma gs d v = -2.5v, i = -100ma gs d
DMP56D0UFB document number: ds36175 rev. 2 - 2 4 of 5 www.diodes.com june 2013 ? diodes incorporated DMP56D0UFB package outline dimensions 1.5 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) figure 7 gate threshold variation vs. ambient temperature a v, g ate t h r es h o ld v o lta g e (v) gs(th) 1 0.5 0 i = -250a d i = -1ma d 0 0.2 0.4 0.6 0.8 1 0 0.3 0.6 0.9 1.2 1.5 -v , source-drain voltage (v) figure 8 diode forward voltage vs. current sd -i , s o u r c e c u r r en t (a) s t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 100 0 5 10 15 20 25 30 35 40 -v , drain-source voltage (v) figure 9 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 1 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 q , total gate charge (nc) figure 10 gate charge characteristics g -v , gate threshold voltage (v) gs v = -25v i = -100ma ds d x1-dfn1006-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ?? ?? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ?? ?? 0.40 all dimensions in mm l2 a1 e b2 l1 l3 d e b1 a
DMP56D0UFB document number: ds36175 rev. 2 - 2 5 of 5 www.diodes.com june 2013 ? diodes incorporated DMP56D0UFB suggested pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 y c g1 g2 x x 1 z
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